Itami, Japan

Hisao Yakushiji

This inventor holds 3 USPTO granted patents. Top assignees: Vlsi Technology Research Association, Mitsubishi Denki Kabushiki Kaisha. Active years: 1982-1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisao Yakushiji. Retrieved from https://idiyas.com/inventor/hisao-yakushiji

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.9

ph-index = 3

Forward Citations = 36(Granted Patents)


Location History:

  • Hyogo, JP (1984)
  • Itami, JP (1982 - 1990)

Company Filing History:


Years Active: 1982-1990

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3 patents (USPTO):Explore Patents

Title: Hisao Yakushiji: Innovator in Semiconductor Technology

Introduction

Hisao Yakushiji is a notable inventor based in Itami, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work has focused on improving the efficiency and quality of semiconductor devices.

Latest Patents

One of Hisao Yakushiji's latest patents is for a semiconductor IC device with a polysilicon resistor. This innovative device includes an active component, such as a bipolar transistor, and a resistor formed from a first silicon layer on a thick insulating film on the semiconductor substrate. A metal silicide film is applied to the surface of the first silicon layer to facilitate connections between the silicon layer and an interconnection layer. The interconnection layer interacts with both parts of the metal silicide film, which are positioned on opposite sides of the insulating film on the first silicon layer. The section of the first silicon layer beneath the insulating film and between the two parts of the metal silicide film serves as the resistor.

Another significant patent is for a semiconductor device manufacturing unit. This unit maintains plasma gas sealed within a quartz tube using an external magnet, which enhances the density and uniformity of the plasma gas. This improvement leads to better quality CVD films deposited with the gas and reduces the processing time for semiconductor wafers. The design includes a movably mounted wafer holder within the quartz tube, supported by a bar that also functions as a ground electrode. Additionally, an RF electrode and magnet are positioned outside the quartz tube, with a heater potentially located outside the RF electrode and magnet.

Career Highlights

Hisao Yakushiji has worked with prominent organizations in the semiconductor industry, including the VLSI Technology Research Association and Mitsubishi Electric Corporation. His experience in these companies has contributed to his expertise and innovative capabilities in semiconductor technology.

Collaborations

Hisao Yakushiji has collaborated with notable colleagues such as Yoshihiro Hirata and Kuniaki Miyake. Their joint efforts have likely fostered advancements in their respective fields.

Conclusion

Hisao Yakushiji's contributions to semiconductor technology through his patents and career achievements highlight his role as an influential inventor. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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