The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 1984

Filed:

Oct. 28, 1980
Applicant:
Inventors:

Yoshihiro Hirata, Hyogo, JP;

Kuniaki Miyake, Hyogo, JP;

Hisao Yakushiji, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118723 ; 118729 ; 118725 ; 118500 ; 118733 ;
Abstract

A semiconductor device manufacturing unit in which plasma gas is maintained sealed in a quartz tube by a magnet disposed outside the quartz tube to make the density of plasma gas high and uniform thereby improving the quality of CVD films deposited with the gas and reducing the processing time for semiconductor wafers. A wafer holder is movably mounted in the quartz tube. A support bar is provided for moving the wafer holder with the support bar serving additionally as a ground electrode. An RF electrode and magnet are disposed outside the quartz tube. A heater may be disposed outside the RF electrode and magnet.


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