Kawasaki, Japan

Hisao Shigematsu




Average Co-Inventor Count = 1.2

ph-index = 5

Forward Citations = 78(Granted Patents)


Location History:

  • Kawasaki, JP (2002 - 2011)
  • Zama, JP (2020)

Company Filing History:


Years Active: 2002-2020

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9 patents (USPTO):Explore Patents

Title: Hisao Shigematsu: Innovator in Compound Semiconductor Technology

Introduction

Hisao Shigematsu is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on advanced devices that enhance the performance and efficiency of electronic systems.

Latest Patents

Shigematsu's latest patents include a compound semiconductor device with a quantum well structure, a power supply device, and a high-frequency amplifier. The compound semiconductor device features a substrate, a compound semiconductor layer, a channel layer, and an electron supply layer, along with source, drain, and gate electrodes. This innovative design allows for improved performance in electronic applications. The high-frequency amplifier patent describes an amplifier that includes an amplifying transistor and an impedance converter circuit, which enhances signal processing capabilities.

Career Highlights

Hisao Shigematsu is currently associated with Fujitsu Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing devices that are crucial for modern electronics.

Collaborations

Shigematsu has collaborated with notable colleagues such as Kenji Imanishi and Hitoshi Tanaka, contributing to various projects that advance semiconductor research and development.

Conclusion

Hisao Shigematsu's innovative work in compound semiconductor technology has established him as a key figure in the field. His contributions continue to influence the development of advanced electronic devices.

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