The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Nov. 13, 1998
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device comprises a collector layer ; a base layer of a carbon-doped Ga In As Sb layer having one surface connected to the collector layer ; an emitter layer connected the other surface of the base layer ; a base contact layer of a carbon-doped GaAsSb layer electrically connected to the base layer ; and a base electrode 32 formed on the base contact layer . The semiconductor device of such structure can have a much reduced base resistance R , whereby InP/GaInAsSb-based HBTs including InP/InGaAs-based HBTs can have higher maximum oscillation frequency f . Because of the carbon-doped semiconductor layer the semiconductor device can have higher reliability.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile