The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Jul. 26, 2018
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/205 (2006.01); H03F 3/193 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/40 (2006.01); H03F 3/21 (2006.01); H03F 1/32 (2006.01); H02M 1/42 (2007.01); H01L 29/15 (2006.01); H03F 3/24 (2006.01); H03F 3/195 (2006.01); H01L 29/36 (2006.01); H01L 29/20 (2006.01); H01L 21/28 (2006.01); H02M 3/335 (2006.01); H02M 1/00 (2006.01); H01L 29/08 (2006.01); H01L 21/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 21/02178 (2013.01); H01L 21/02271 (2013.01); H01L 21/28575 (2013.01); H01L 29/1029 (2013.01); H01L 29/155 (2013.01); H01L 29/205 (2013.01); H01L 29/401 (2013.01); H01L 29/452 (2013.01); H01L 29/4958 (2013.01); H01L 29/66462 (2013.01); H02M 1/4208 (2013.01); H03F 1/3205 (2013.01); H03F 1/3241 (2013.01); H03F 1/3247 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03F 3/21 (2013.01); H03F 3/245 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/246 (2013.01); H01L 21/28264 (2013.01); H01L 29/0843 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H02M 1/4225 (2013.01); H02M 3/33576 (2013.01); H02M 2001/007 (2013.01);
Abstract
A compound semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, a channel layer formed over the compound semiconductor layer, an electron supply layer formed over the channel layer, and a source electrode, a drain electrode, and a gate electrode that are formed apart from each other over the electron supply layer. A quantum well structure is formed by the compound semiconductor layer, the channel layer, and the electron supply layer.