This inventor holds 1 USPTO granted patent. Top assignees: Powdec K.k., Toyoda Gosei. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 7 
1 out of 57 Years Active: 2026
Title: Hisao Sato and Semiconductor Innovation.
Introduction
Hisao Sato is an inventor associated with Kiyosu, Japan. His patent work includes a semiconductor element and device designed around layered semiconductor materials and electrodes.
Latest Patents
Sato is listed as an inventor on 1 patent, titled “Semiconductor Element and Device.” The invention describes a semiconductor element with four semiconductor layers, two intermediate layers, and source, drain, and gate electrodes. The second semiconductor layer has a larger band gap than the first and third semiconductor layers. The two intermediate layers sandwiching it have band gaps larger than that of the second semiconductor layer.
Career Highlights
Sato’s listed company affiliations include Toyoda Gosei and Powdec K.K. The available information does not specify his roles or the dates of these affiliations.
Collaborations
His listed coworkers include Koji Okuno and Daisuke Shinoda.
Conclusion
Hisao Sato’s recorded patent highlights work on semiconductor-layer structures and electrodes, alongside professional associations with Toyoda Gosei and Powdec K.K.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile