The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jul. 06, 2023
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Sanken Electric Co., Ltd., Niiza, JP;
Hisao Sato, Kiyosu, JP;
Koji Okuno, Kiyosu, JP;
Daisuke Shinoda, Kiyosu, JP;
Toshiya Uemura, Kiyosu, JP;
Hironobu Narui, Oyama, JP;
Hiroji Kawai, Oyama, JP;
Shuichi Yagi, Oyama, JP;
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Powdec K.K., Oyama, JP;
Abstract
A semiconductor element includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first intermediate layer, a second intermediate layer, a source electrode, a drain electrode, and a gate electrode. The band gap of the second semiconductor layer is larger than the band gaps of the first semiconductor layer and the third semiconductor layer. The band gaps of the first intermediate layer and the second intermediate layer that sandwich the second semiconductor layer are larger than the band gap of the second semiconductor layer.