Hironobu Narui

Title: Hironobu Narui: Innovator in GaN-based Technology

Introduction

Hironobu Narui is a prominent inventor based in Oyama, Japan. He is known for his contributions to the field of semiconductor technology, particularly in the development of advanced field effect transistors. His innovative work has led to significant advancements in electrical equipment.

Latest Patents

Hironobu Narui holds a patent for a "Normally-off mode polarization super junction GaN-based field effect transistor and electrical equipment." This invention features a unique structure that includes an undoped GaN layer, an AlGaN layer, an island-like undoped GaN layer, a p-type GaN layer, and a p-type InGaN layer stacked in a specific order. The design incorporates a gate electrode on the uppermost layer, along with source and drain electrodes on the AlGaN layer and p-type InGaN layer. This configuration allows for improved performance in electronic applications.

Career Highlights

Narui's career has been marked by his dedication to advancing semiconductor technology. His work at Powdec K.K. has positioned him as a key player in the industry. He has focused on developing innovative solutions that enhance the efficiency and functionality of electronic devices.

Collaborations

Throughout his career, Hironobu Narui has collaborated with notable colleagues, including Hiroji Kawai and Shuichi Yagi. These partnerships have contributed to the success of his projects and the advancement of technology in their field.

Conclusion

Hironobu Narui's contributions to GaN-based technology exemplify his commitment to innovation in the semiconductor industry. His patent and collaborative efforts continue to influence the development of advanced electrical equipment.