The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Sep. 16, 2021
Powdec K.k., Oyama, JP;
POWDEC K.K., Oyama, JP;
Abstract
This normally-off mode polarization super junction GaN-based FET has an undoped GaN layer, an AlGaN layer, an island-like undoped GaN layer, a p-type GaN layerand a p-type InGaN layerwhich are stacked in order. The FET has a gate electrodeon the uppermost layer, a source electrodeand a drain electrodeon the AlGaN layerand a p-type InGaN layerand a gate electrodewhich are located beside one end of the undoped GaN layeron the AlGaN layer. The gate electrodemay be provided on the p-type InGaN layervia a gate insulating film. At a non-operating time, n≤n<n<nis satisfied for the concentration nof the 2DEGformed in the undoped GaN layer/the AlGaN layerhetero-interface just below the gate electrode, the concentration nof the 2DEGjust below the gate electrode, the concentration nof the 2DEGin the polarization super junction region and the concentration nof the 2DEGin the part between the polarization super junction region and the drain electrode