Hisao Muraki

Title: Hisao Muraki: Innovator in Silicon Carbide Evaluation

Introduction

Hisao Muraki is a notable inventor based in Annaka, Japan. He has made significant contributions to the field of materials science, particularly in the evaluation of crystal defects in silicon carbide single crystal wafers. His innovative methods have implications for various applications in semiconductor technology.

Latest Patents

Hisao Muraki holds a patent for a method titled "Method for evaluating crystal defects in silicon carbide single crystal wafer." This method involves etching a silicon carbide single crystal wafer with melted KOH to create etch pits that measure between 10 to 50 μm. After etching, microscopic images are obtained through automatic photography at multiple positions on the wafer's surface. The method determines the presence of defect-dense areas by analyzing the length of the etch pits and classifies the images accordingly. This process allows for a comprehensive evaluation of crystal defects in silicon carbide single crystal wafers.

Career Highlights

Muraki is associated with Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work at the company has been instrumental in advancing the understanding and evaluation of silicon carbide materials. His expertise in this area has positioned him as a valuable asset in the field of materials science.

Collaborations

Some of Hisao Muraki's coworkers include Yutaka Shiga and Toru Takahashi. Their collaborative efforts contribute to the ongoing research and development in the semiconductor sector.

Conclusion

Hisao Muraki's innovative methods for evaluating crystal defects in silicon carbide single crystal wafers highlight his significant contributions to materials science. His work continues to influence advancements in semiconductor technology.