Kokubunji, Japan

Hisanobu Ishida


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Hisanobu Ishida: Innovator in Charge Pump Circuit Technology

Introduction

Hisanobu Ishida is a prominent inventor based in Kokubunji, Japan. He is known for his significant contributions to semiconductor technology, particularly in the development of charge pump circuits. His innovative work has led to advancements in non-volatile memory devices, enhancing their efficiency and performance.

Latest Patents

Ishida holds a patent for a charge pump circuit designed to generate high voltages required in various modes of non-volatile memory devices. This invention allows for the generation of different stepped-up voltages and output currents within a single charge pump circuit. Notably, it achieves this without increasing the chip area or power consumption, particularly in standby mode. The patent highlights the use of an N number of basic pump cell stages to step up voltages effectively while maintaining low power consumption levels.

Career Highlights

Ishida is currently employed at Renesas Technology Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in improving the functionality and efficiency of memory devices, making significant impacts in the industry.

Collaborations

Throughout his career, Ishida has collaborated with notable colleagues, including Takanori Yamazoe and Yuichiro Akimoto. These collaborations have fostered a creative environment that has led to further advancements in their respective fields.

Conclusion

Hisanobu Ishida's contributions to charge pump circuit technology exemplify his dedication to innovation in the semiconductor industry. His work not only enhances the performance of non-volatile memory devices but also sets a standard for future developments in the field.

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