Kobe, Japan

Hisahi Koyama

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Kobe Seiko Sho. Active years: 1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisahi Koyama. Retrieved from https://idiyas.com/inventor/hisahi-koyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 1996

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1 patent (USPTO):Explore Patents

Title: Hisahi Koyama: Innovator in Diamond Film Technology

Introduction

Hisahi Koyama is a prominent inventor based in Kobe, Japan. He is known for his groundbreaking work in the field of semiconductor technology, particularly in the development of diamond film field effect transistors. His innovative approach has contributed significantly to advancements in electronic devices.

Latest Patents

Hisahi Koyama holds a patent for a diamond film field effect transistor with self-aligned source and drain. This invention features a channel layer made of semiconducting diamond and an insulating layer of high-resistance diamond. The design minimizes contact resistance between electrodes and the respective source and drain regions, enhancing the overall performance of the transistor.

Career Highlights

Koyama is associated with Kabushiki Kaisha Kobe Seiko Sho, where he has made significant contributions to the field of semiconductor technology. His work has been recognized for its potential to improve the efficiency and effectiveness of electronic components.

Collaborations

Hisahi Koyama has collaborated with notable colleagues, including Kozo Nishimura and Koji Kobashi. These partnerships have fostered a creative environment that has led to innovative solutions in the semiconductor industry.

Conclusion

Hisahi Koyama's contributions to diamond film technology exemplify the impact of innovation in the field of electronics. His work continues to inspire advancements that may shape the future of semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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