The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1996
Filed:
Jul. 06, 1994
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Kobe Seiko Sho, Kobe, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257280 ; 257613 ;
Abstract
A diamond film field effect transistor, excellent in characteristics and a method of manufacturing the transistor, in which a contact resistance between electrodes and respective source and drain region is small. The transistor has a channel layer of a p-layer made of semiconducting diamond, an i-layer made of high resistance diamond as a gate insulating layer, which is formed on the channel layer, a gate electrode film formed on the i-layer and a source region and a drain region formed on the surface of the i-layer in self-alignment to the gate electrode film by ion implantation using the gate electrode film, side walls and a protective film as masks.