Susono, Japan

Hisaharu Obinata

This inventor holds 1 USPTO granted patent. Top assignee: Ulvac, Inc.. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisaharu Obinata. Retrieved from https://idiyas.com/inventor/hisaharu-obinata-87arvr9x

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 55(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Hisaharu Obinata: Innovator in Sputtering Technology

Introduction

Hisaharu Obinata is a notable inventor based in Susono, Japan. He has made significant contributions to the field of sputtering technology, particularly in the development of apparatuses that enhance substrate processing.

Latest Patents

His most recent patent is a sputtering apparatus designed for filling pores of a circular substrate. This innovative device ensures that the distance between the target and the substrate is greater than the diameter of the circular substrate wafer. Additionally, it maintains an internal gas pressure level in the vacuum chamber not exceeding 1×10 Pa during the sputtering process. This design effectively fills the pores on the substrate without generating dust and void spaces, showcasing his commitment to advancing technology in this area.

Career Highlights

Hisaharu Obinata is currently employed at ULVAC, Inc., a company known for its cutting-edge technology in vacuum equipment and materials. His work at ULVAC has allowed him to focus on innovations that improve manufacturing processes in various industries.

Collaborations

Throughout his career, Obinata has collaborated with esteemed colleagues such as Tetsuji Kiyota and Satoru Toyoda. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Hisaharu Obinata's contributions to sputtering technology exemplify his dedication to innovation and excellence. His work continues to influence the industry, paving the way for future advancements in substrate processing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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