Osaka, Japan

Hiroyuki Oka

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Oka. Retrieved from https://idiyas.com/inventor/hiroyuki-oka-9mkq7517

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Hiroyuki Oka: Innovator in Semiconductor Technology

Introduction

Hiroyuki Oka is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device and its manufacturing method.

Latest Patents

Hiroyuki Oka holds 1 patent for a semiconductor device and a method for manufacturing the semiconductor device. This invention features a semiconductor substrate with a surface that has an abrasion trace. The dopant diffusion region in the device includes a portion that extends at an angle within the range of -5° to +5° relative to the direction of the abrasion trace.

Career Highlights

Oka is associated with Sharp Kabushiki Kaisha Corporation, a leading company in the electronics industry. His work at Sharp has allowed him to focus on advancing semiconductor technologies that are crucial for modern electronic devices.

Collaborations

Throughout his career, Hiroyuki Oka has collaborated with notable colleagues, including Kenji Fujita and Yasushi Funakoshi. These partnerships have fostered innovation and contributed to the success of their projects.

Conclusion

Hiroyuki Oka's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His patent reflects a commitment to advancing technology and improving manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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