The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
May. 13, 2011
Applicants:
Kenji Fujita, Osaka, JP;
Yasushi Funakoshi, Osaka, JP;
Hiroyuki Oka, Osaka, JP;
Satoshi Okamoto, Osaka, JP;
Inventors:
Kenji Fujita, Osaka, JP;
Yasushi Funakoshi, Osaka, JP;
Hiroyuki Oka, Osaka, JP;
Satoshi Okamoto, Osaka, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 31/068 (2012.01); B24B 27/06 (2006.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0682 (2013.01); B24B 27/0633 (2013.01); H01L 31/022441 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01);
Abstract
A semiconductor device and a method for manufacturing the semiconductor device are provided. A semiconductor substrate has a surface on which an abrasion trace is formed, and a dopant diffusion region includes a portion extending in the direction at an angle within the range of −5° to +5° with respect to the direction in which the abrasion trace extends.