Company Filing History:
Years Active: 1990-1993
Title: Innovations of Hiroyuki Nihira
Introduction
Hiroyuki Nihira is a prominent inventor based in Ayase, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advanced methods for fabricating bipolar transistors and manufacturing semiconductor devices.
Latest Patents
One of his latest patents is a method of fabricating bipolar transistors using self-aligned polysilicon. This innovation involves a micronized structure for high-speed LSI, utilizing self-alignment technology. A barrier insulating film is strategically buried around the emitter layer, deeper than the junction level between the active base layer and the collector layer. The process includes forming a polysilicon film pattern that defines the active base region and serves as part of the base electrode. Additionally, a photoresist layer is converted to a carbonized layer through ion implantation. The formation of a micronized emitter layer is achieved using polysilicon-emitter technology, with ion implantation performed before polysilicon film deposition or simultaneous doping during deposition, followed by rapid thermal annealing to activate the doped impurity.
Another significant patent is a method of manufacturing semiconductor devices. This method involves forming a laminate structure on the n-type collector region, which includes a buffer oxide film, an oxidation-resistant film, and a first poly-Si film containing a p-type impurity. A protective oxide film is then formed using CVD, followed by the creation of an opening that reaches the oxidation-resistant film. The oxidation-resistant film is excessively etched to expose the buffer oxide film, which is then removed. A second poly-Si film fills the bore created, and heat treatment under an oxidative atmosphere forms a thermal oxide film covering the second poly-Si film. This process also allows for the diffusion of the p-type impurity into the collector region, forming a p-type outer base region, along with a p-type inner base region, n-type emitter region, and an emitter electrode.
Career Highlights
Hiroyuki Nihira is associated with Kabushiki Kaisha Toshiba, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have contributed to the development of high-performance electronic devices.
Collaborations
He has collaborated with notable coworkers, including Nobuyuki Itoh and Hiroomi Nakajima, who have also contributed to the field of semiconductor