The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 1990
Filed:
Jan. 30, 1989
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method of manufacturing a semiconductor device comprising steps of forming a trench on a semiconductor substrate, forming a first film on the surface of the semiconductor substrate so as to have a large thickness on an upper portion of a side surface of the trench, and to have a small thickness on a bottom portion of the trench, selectively doping an impurity in the bottom portion of the trench through a thin portion of the first film formed on the bottom portion of the trench to form an impurity region on the bottom portion of the trench, removing the first film, and forming a second film having an insulating property on the surface of the semiconductor substrate. A dielectric material or conductive material layer is formed in the trench in which the second film is formed on the inner surface. When the dielectric material or the conductive material layer is formed in the trench, a method of this invention can be applied to formation of trench isolation. When the conductive material layer is formed in the trench, this method can be applied formation of a trench capacitor.