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For the Inventor, By the Inventor

Kanagawa, Japan

Hiroyuki Kobatake

This inventor holds 13 USPTO granted patents and 2 published patent applications. Top assignees: Renesas Electronics Corporation, Nec Electronics Corporation, Renesas Electronics Coporation. Active years: 2009-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Kobatake. Retrieved from https://idiyas.com/inventor/hiroyuki-kobatake-oo16c0hr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13 

% Patents Active = 30.8

Average Co-Inventor Count = 1.1

ph-index = 3

Forward Citations = 32(Granted Patents)


Location History:

  • Kawasaki, JP (2012 - 2015)
  • Kanagawa, JP (2009 - 2016)

Company Filing History:

goldMedal11 out of 7,654 
 
Renesas Electronics Corporation
 patents
silverMedal1 out of 2,467 
 
Nec Electronics Corporation
 patents
bronzeMedal1 out of 6 
 
Renesas Electronics Coporation
 patents

Years Active: 2009-2016

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13 patents (USPTO):Explore Patents
1. 9263119 - Semiconductor device having memory cell with electrostatic capacitance circuit (2016-02-16),
2. 9202553 - Semiconductor storage device (2015-12-01),
3. 8824189 - Semiconductor device (2014-09-02),
4. 8592942 - Non-volatile semiconductor memory device (2013-11-26),
5. 8446163 - Test circuit and test method for testing differential input circuit (2013-05-21),
6. 8432747 - Static random access memory (SRAM) and test method of the SRAM having precharge circuit to prepcharge bit line (2013-04-30),
7. 8208313 - Static random access memory (SRAM) and test method of the SRAM having precharge circuit to precharge bit line (2012-06-26),
8. 8149640 - Differential sense amplifier (2012-04-03),
9. 8144523 - Semiconductor storage device (2012-03-27),
10. 8143910 - Semiconductor integrated circuit and method of testing the same (2012-03-27),
11. 8085610 - SRAM and testing method of SRAM (2011-12-27),
12. 7911870 - Fuse data read circuit having control circuit between fuse and current mirror circuit (2011-03-22),
13. 7518936 - Semiconductor integrated circuit device and inspection method of the same (2009-04-14),

Title: Innovations of Hiroyuki Kobatake

Introduction

Hiroyuki Kobatake is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work has been instrumental in advancing memory cell designs and semiconductor storage devices.

Latest Patents

One of his latest patents is a semiconductor device featuring a memory cell with an electrostatic capacitance circuit. This innovation involves a capacitance coupled to a memory node and a word line of an SRAM cell, providing an electrostatic capacitance that varies based on the state of the word line and memory node. Another notable patent is for a semiconductor storage device that includes various transistors and cell node lines, designed to enhance storage capabilities.

Career Highlights

Throughout his career, Hiroyuki Kobatake has worked with leading companies in the electronics industry, including Renesas Electronics Corporation and NEC Electronics Corporation. His experience in these organizations has allowed him to develop cutting-edge technologies that have impacted the semiconductor landscape.

Collaborations

Hiroyuki has collaborated with notable colleagues such as Noriaki Kodama and Kenichi Hidaka, contributing to various projects that have furthered innovation in semiconductor technology.

Conclusion

Hiroyuki Kobatake's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator. His work continues to influence advancements in memory cell and storage device designs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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