Company Filing History:
Years Active: 2006
Title: Hiroyuki Dobashi: Innovator in Semiconductor Manufacturing
Introduction
Hiroyuki Dobashi is a prominent inventor based in Gunma, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative approaches have led to advancements that enhance the efficiency and reliability of semiconductor devices.
Latest Patents
Hiroyuki Dobashi holds a patent for a manufacturing method of semiconductor devices. This patent describes a process where an LDD structure and a silicide layer are formed without reducing the thickness of the silicon substrate or introducing carbon contamination. The method involves forming a spacer on the sidewall of a gate electrode through two process steps: dry-etching and wet-etching. Additionally, a silicon nitride film used as a buffer film during the injection of a high dose of impurities is removed by wet-etching. This innovative approach prevents the reduction in thickness of the silicon substrate and carbon contamination. It also suppresses variations in the depth of high and low impurity concentration regions and the silicide forming region across different locations on the wafer due to the high selection ratio available with wet-etching.
Career Highlights
Hiroyuki Dobashi is associated with Sanyo Electric Co., Ltd., where he has been instrumental in developing advanced semiconductor technologies. His work has significantly impacted the efficiency of semiconductor manufacturing processes.
Collaborations
Hiroyuki has collaborated with notable colleagues, including Katsuhiko Iizuka and Kazuo Okada. Their combined expertise has contributed to the success of various projects within the semiconductor industry.
Conclusion
Hiroyuki Dobashi's innovative contributions to semiconductor manufacturing demonstrate his commitment to advancing technology in this critical field. His patent reflects a significant step forward in improving the manufacturing process of semiconductor devices.