This inventor holds 1 USPTO granted patent. Top assignee: Renesas Electronics Corporation. Active years: 2012.
Company Filing History:
Years Active: 2012
Title: Hiroyasu Nousou: Innovator in Semiconductor Technology
Introduction
Hiroyasu Nousou is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to the field of semiconductor technology. With a focus on improving operational reliability in semiconductor storage devices, his work has garnered attention in the industry.
Latest Patents
Hiroyasu Nousou holds a patent for a semiconductor storage device. This innovative device inhibits shorts between cells, thereby enhancing operational reliability and contributing to high-speed operation. The design includes an active region where DRAM cells are formed, defined by an isolation trench in a silicon substrate. The isolation trench features an isolation insulating film, and each DRAM cell comprises a MOS transistor with a gate electrode and a capacitor with an upper electrode. Notably, a recess is formed in the upper portion of the isolation trench, allowing the upper electrode of the capacitor to have a buried portion within the recess.
Career Highlights
Hiroyasu Nousou is currently employed at Renesas Electronics Corporation, where he continues to advance semiconductor technology. His work has been instrumental in developing solutions that address critical challenges in the industry.
Collaborations
Hiroyasu has collaborated with notable colleagues, including Hidenori Sato and Hiroaki Sekikawa. Their combined expertise has contributed to the success of various projects within the semiconductor field.
Conclusion
Hiroyasu Nousou's innovative work in semiconductor storage devices exemplifies his commitment to enhancing technology in this vital sector. His contributions continue to influence the development of high-speed and reliable semiconductor solutions.