Miyagi, Japan

Hiroya Ogawa

This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Electron Limited. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroya Ogawa. Retrieved from https://idiyas.com/inventor/hiroya-ogawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Hiroya Ogawa - Innovator in Plasma Processing Technology

Introduction

Hiroya Ogawa is a notable inventor based in Miyagi, Japan. He has made significant contributions to the field of plasma processing technology. His innovative work has led to the development of a unique plasma processing apparatus.

Latest Patents

Hiroya Ogawa holds 1 patent for his invention of a plasma processing apparatus. This apparatus includes a plasma processing chamber, a substrate support, a lower electrode, and an RF power source. Additionally, it features an electromagnet unit and an upper electrode assembly designed for efficient plasma processing.

Career Highlights

Ogawa's career is marked by his dedication to advancing plasma processing technologies. He has worked extensively in research and development, focusing on improving the efficiency and effectiveness of plasma processing systems. His work has been instrumental in enhancing the capabilities of various industrial applications.

Collaborations

Hiroya Ogawa has collaborated with Koki Hidaka, contributing to the advancement of their shared projects in plasma technology. Their teamwork has fostered innovation and led to the successful development of new technologies.

Conclusion

Hiroya Ogawa's contributions to plasma processing technology exemplify his commitment to innovation. His patent and collaborative efforts highlight the importance of teamwork in advancing technological frontiers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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