Hirotugu Eguchi

Title: Hirotugu Eguchi: Innovator in Integrated Circuit Technology

Introduction

Hirotugu Eguchi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of integrated circuit technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Eguchi's latest patents is titled "Substrate bias through polysilicon line." This invention discloses a high-density integrated circuit that employs different first and second channel types of insulated gate field effect transistors. The design comprises at least three stacked wiring layers, with the lowest layer formed of polycrystalline silicon, which includes silicon gates of the transistors. One of the upper layers is also formed of polycrystalline silicon and is used for feeding a power supply to some of the transistors, connecting to at least one well region where the first channel type of transistors is formed. The other upper layer is made of high-conductivity metal.

Another notable patent is the "High speed-low power consuming IGFET integrated circuit." This improved semiconductor device operates at high speed while consuming low power. It includes a common impurity-doped region, a first insulated gate field effect transistor utilizing this region as a drain, and a second insulated gate field effect transistor also using the common impurity-doped region as a drain. The device features control means for simultaneous switching operations of both transistors and mechanisms for deriving an output signal from the common impurity-doped region.

Career Highlights

Hirotugu Eguchi has worked with notable companies in the technology sector, including Nippon Electric Co., Ltd. and NEC Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

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Conclusion

Hirotugu Eguchi's contributions to integrated circuit technology through his patents demonstrate his commitment to advancing the field of semiconductor devices. His innovative designs continue to influence the industry and pave the way for future developments.