The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1987
Filed:
Oct. 17, 1984
Hirotugu Eguchi, Tokyo, JP;
Nippon Electric Co., Ltd., , JP;
Abstract
An improved semiconductor device operable at a high-speed and with a low power consumption is disclosed. The device comprises a common impurity-doped region, a first insulated gate field effect transistor utilizing the common impurity-doped region as a drain thereof, a second insulated gate field effect transistor utilizing the common impurity-doped region as a drain thereof, control means for controlling switching operations of the first and second transistor at the same time and means for deriving an output signal from the common impurity-doped region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile