Hiratsuka, Japan

Hirotaka Nakajima


Average Co-Inventor Count = 4.7

ph-index = 3

Forward Citations = 28(Granted Patents)


Location History:

  • Kanagawa, JP (1999 - 2005)
  • Hiratsuka, JP (2006)

Company Filing History:


Years Active: 1999-2006

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4 patents (USPTO):Explore Patents

Title: Hirotaka Nakajima: Innovator in Silicon Crystal Technology

Introduction

Hirotaka Nakajima is a prominent inventor based in Hiratsuka, Japan. He has made significant contributions to the field of silicon crystal technology, holding a total of 4 patents. His work focuses on improving the production methods and quality of silicon single crystals, which are essential in various technological applications.

Latest Patents

Hirotaka Nakajima's latest patents include a production method for silicon single crystal and a production device for single crystal ingot. He has also developed a heat treating method for silicon crystal wafers. This method involves growing a silicon crystal using the Czochralsky method, where the pulling speed (V) and the in-crystal temperature gradient (G) are carefully controlled to produce high-quality silicon wafers. His innovations ensure that the oxygen concentration is maintained at optimal levels, resulting in uniform wafer radial distribution.

Career Highlights

Throughout his career, Nakajima has worked with notable companies such as Komatsu Electronic Metals Co., Ltd. and Komatsu Denshi Kinzoku Kabushiki Kaisha. His experience in these organizations has allowed him to refine his expertise in silicon crystal manufacturing and contribute to advancements in the field.

Collaborations

Hirotaka Nakajima has collaborated with esteemed colleagues, including Toshirou Kotooka and Yoshiyuki Shimanuki. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Hirotaka Nakajima's contributions to silicon crystal technology have established him as a key figure in the industry. His patents and collaborative efforts continue to influence advancements in the field, ensuring the ongoing development of high-quality silicon materials.

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