Yokohama, Japan

Hirosyoshi Tanimoto


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Hirosyoshi Tanimoto: Innovator in Nonvolatile Semiconductor Memory Devices

Introduction

Hirosyoshi Tanimoto is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of nonvolatile memory devices. His innovative work has led to advancements that are crucial for modern electronic devices.

Latest Patents

Tanimoto holds a patent for a nonvolatile semiconductor memory device. This invention includes a substrate and a plurality of memory strings formed on the substrate. The memory string features a first select gate transistor, multiple memory cells, and a second select gate transistor. The design incorporates various components such as pillar semiconductors, gate insulation layers, and electrodes, which work together to enhance the functionality of the memory device.

Career Highlights

Hirosyoshi Tanimoto is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to focus on innovative solutions in semiconductor memory technology. Tanimoto's expertise and dedication have positioned him as a key figure in his field.

Collaborations

Throughout his career, Tanimoto has collaborated with esteemed colleagues such as Toshiyuki Enda and Takashi Izumida. These collaborations have fostered an environment of innovation and have contributed to the success of their projects.

Conclusion

Hirosyoshi Tanimoto's contributions to nonvolatile semiconductor memory devices exemplify the spirit of innovation in technology. His work continues to influence the development of advanced electronic systems.

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