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Suwon, South Korea

Hiroshige Goto

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshige Goto. Retrieved from https://idiyas.com/inventor/hiroshige-goto-i983os9i

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 5(Granted Patents)


Company Filing History:

goldMedal2 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2016

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2 patents (USPTO):Explore Patents
1. 9406714 - Unit pixel with photodiode under gate of sensing transistor and image pixel array including the same (2016-08-02),
2. 9300887 - Image sensor and computing system having the same (2016-03-29),

Title: Hiroshige Goto: Pioneering Inventor from Suwon-si, KR

Introduction: Hiroshige Goto is a renowned inventor hailing from Suwon-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hiroshige Goto's most recent patents focus on advancements in artificial intelligence algorithms for autonomous vehicles, revolutionizing the way we perceive transportation and safety.

Career Highlights: With over two decades of experience in the tech industry, Hiroshige Goto has held key positions in leading research institutions and tech companies, driving forward cutting-edge projects and inventions.

Collaborations: Throughout his career, Hiroshige Goto has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of innovation and excellence in all his projects.

Conclusion: Hiroshige Goto's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventions and patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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