The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Nov. 07, 2014
Unit pixel with photodiode under gate of sensing transistor and image pixel array including the same
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Ju-Hwan Jung, Seoul, KR;
Young-Gu Jin, Osan-si, KR;
Hiroshige Goto, Suwon-si, KR;
Hee-Woo Park, Seoul, KR;
Jung-Hyung Pyo, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A unit pixel includes a sensing transistor, a photo diode, and a reset drain region. The sensing transistor includes a reference active region, an output active region, and a gate. The gate is between the reference active region and the output active region to electrically connect the reference active region to the output active region based on a gate voltage. The reference active region and output active region are within a semiconductor substrate. The photo diode is under the gate within the semiconductor substrate. The reset drain region is within the semiconductor substrate and is electrically connected to the photo diode by the gate based on the gate voltage.