Kanagawa, Japan

Hiroshi Uozaki


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2015-2017

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2 patents (USPTO):Explore Patents

Title: Hiroshi Uozaki: Innovator in Semiconductor Technology

Introduction

Hiroshi Uozaki is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that focus on improving the reliability of semiconductor devices.

Latest Patents

Uozaki's latest patents include a method of manufacturing semiconductor devices aimed at enhancing reliability. The invention addresses the challenge of preventing an increase in the size of grains in a gate electrode when forming a nonvolatile memory and MOSFETs on the same substrate. This is achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer. Each of these electrodes is configured from a stack of two polysilicon film layers, which contributes to the overall performance and reliability of the semiconductor device.

Career Highlights

Hiroshi Uozaki is currently associated with Renesas Electronics Corporation, a leading company in the semiconductor industry. His work has been instrumental in advancing semiconductor technology, particularly in the area of nonvolatile memory and MOSFET integration.

Collaborations

Uozaki has collaborated with notable colleagues such as Yasuhiro Takeda and Keiichi Maekawa. Their combined expertise has contributed to the successful development of innovative semiconductor solutions.

Conclusion

Hiroshi Uozaki's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of reliable semiconductor devices.

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