Company Filing History:

13 out of 16,612

Semiconductor Energy Laboratory Co., Ltd.

Years Active: 1997-2012

Loading Chart...

14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8278195 - Plasma CVD apparatus (2012-10-02),

2. 8053338 - Plasma CVD apparatus (2011-11-08),

3. 7723218 - Plasma CVD apparatus (2010-05-25),

4. 7465679 - Insulating film and method of producing semiconductor device (2008-12-16),

5. 7346042 - Information distributing method, information distributing system, information distributing server, mobile communication network system and communication service providing method (2008-03-18),

6. 6499427 - Plasma CVD apparatus (2002-12-31),

7. 6465284 - Semiconductor device and method for manufacturing the same (2002-10-15),

8. 6283060 - Plasma CVD apparatus (2001-09-04),

9. 6210997 - Semiconductor device and method for manufacturing the same (2001-04-03),

10. 6025630 - Insulating film formed using an organic silane and method of producing (2000-02-15),

11. 5966594 - Semiconductor device and method for manufacturing the same (1999-10-12),

12. 5866932 - Insulating film formed using an organic silane and method of producing (1999-02-02),

13. 5837614 - Insulating film and method of producing semiconductor device (1998-11-17),

14. 5663077 - Method of manufacturing a thin film transistor in which the gate (1997-09-02),

Title: Hiroshi Uehara: Innovator in Plasma CVD Technology

Introduction

Hiroshi Uehara, a prominent inventor based in Kanagawa, Japan, has made significant contributions to the field of plasma chemical vapor deposition (CVD) technology. With a total of 14 patents to his name, Uehara has demonstrated a commitment to advancing technological innovations that enhance production efficiency and quality.

Latest Patents

One of Uehara's latest inventions is a novel plasma CVD apparatus designed to prevent unnecessary discharges, such as arc discharges. This innovation reduces the number of particles caused by peeling films attached to the reaction chamber. By increasing the percentage of time that contributes to production during operational hours, the apparatus maintains its compact design while ensuring ease of use. The configuration includes a conductive reaction chamber equipped with a power source, vacuum exhausting means, and a reaction gas introduction pipe. Plasmas are generated within a space surrounded by an electrode, a substrate holder, and an insulator, marking a significant breakthrough in the efficiency and effectiveness of plasma CVD technology.

Career Highlights

Throughout his career, Hiroshi Uehara has worked with reputable companies such as the Semiconductor Energy Laboratory Co., Ltd. and NTT Docomo, Inc. His experiences in these organizations have equipped him with the expertise and knowledge necessary to develop cutting-edge technological solutions.

Collaborations

Uehara has collaborated with distinguished colleagues in the industry, including Shunpei Yamazaki and Mitsunori Sakama. These partnerships have undoubtedly contributed to his inventive successes and the evolution of plasma CVD technologies.

Conclusion

Hiroshi Uehara stands out as an influential inventor in the realm of plasma CVD technology. His continued innovation and dedication to improving production processes are paving the way for advancements that benefit various industries. With a robust portfolio of patents and meaningful collaborations, Uehara’s impact is sure to be felt for years to come.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.