The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Apr. 11, 2005
Shunpei Yamazaki, Setagaya, JP;
Toru Takayama, Atsugi, JP;
Mitsunori Sakama, Hiratsuka, JP;
Hisashi Abe, Nagareyama, JP;
Hiroshi Uehara, Yamato, JP;
Mika Ishiwata, Sagamihara, JP;
Shunpei Yamazaki, Setagaya, JP;
Toru Takayama, Atsugi, JP;
Mitsunori Sakama, Hiratsuka, JP;
Hisashi Abe, Nagareyama, JP;
Hiroshi Uehara, Yamato, JP;
Mika Ishiwata, Sagamihara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, unknown;
Abstract
In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamberwith a power source, a vacuum exhausting means, and a reaction gas introduction pipe, plasmais generated in a space surrounded by an electrode, a substrate holder, and an insulator