Semiconductor Energy Laboratory Co., Ltd.

Ntt Docomo, Inc.

Hiroshi Uehara

Shunpei Yamazaki

Mitsunori Sakama

Takeshi Fukada

Toru Takayama

Hisashi Abe

Mika Ishiwata

Yasuhiko Takemura

Hiroki Adachi

Akira Takenouchi

Yukiko Uehara

Sadayuki Hongo

Shoichi Horiguchi

Kazutoshi Sumiya

Shoichiro Ishigaki

Nobuhiko Shigiya

Katsumi Tanaka

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamberwith a power source, a vacuum exhausting means, and a reaction gas introduction pipe, plasmais generated in a space surrounded by an electrode, a substrate holder, and an insulator

Plasma CVD apparatus

A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

Insulating film and method of producing semiconductor device

An information distributing method etc. are provided. An information providing server comprises a first transmission device for transmitting image data to a communication terminal, a first conversion device for converting attached information attached to the image data into converted information of a format suitable for aural read-out, a second conversion device for converting the converted information into voice information, a second transmission device for transmitting the voice information and/or the converted information to the communication terminal, and a third transmission device for transmitting synchronizing information for synchronizing image data with the voice information on a screen of the communication terminal.

Information distributing method, information distributing system, information distributing server, mobile communication network system and communication service providing method

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber with a power source a vacuum exhausting means and a reaction gas introduction pipe plasma is generated in a space surrounded by an electrode a substrate holder and an insulator

A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.

Semiconductor device and method for manufacturing the same

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber,with a power source,, a vacuum exhausting means,, and a reaction gas introduction pipe,, plasma,is generated in a space surrounded by an electrode,, a substrate holder,, and an insulator

A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide-film and the second oxide film are used as a gate insulating film.

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Kanagawa, Japan

Hiroshi Uehara