Hirakata, Japan

Hiroshi Sano

This inventor holds 2 USPTO granted patents. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 1994-1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Sano. Retrieved from https://idiyas.com/inventor/hiroshi-sano-e1ru0q2x

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 72(Granted Patents)


Company Filing History:


Years Active: 1994-1995

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2 patents (USPTO):Explore Patents

Title: Hiroshi Sano: Innovator in Thin Film Technology

Introduction

Hiroshi Sano is a prominent inventor based in Hirakata, Japan. He has made significant contributions to the field of thin film technology, holding 2 patents that showcase his innovative approaches to manufacturing and defect detection in electronic devices.

Latest Patents

One of Hiroshi Sano's latest patents is a method of manufacturing a thin film transistor. In this method, when impurity ions are introduced in a channel region between source and drain regions in a semiconductor layer, an insulator layer is first formed on the semiconductor layer. Impurity ions generated by high-frequency discharge are then introduced through the insulator layer into the semiconductor layer under a specified acceleration voltage. This technique allows for control over the introduction depth of impurities and the amount of impurities in the channel region, ultimately enabling control over the threshold voltage of the thin film transistor. This method is particularly advantageous for application on large substrates.

Another notable patent is for a defect detection and defect removal apparatus for thin film electronics. In this invention, a laser beam is irradiated and scanned on a substrate of a liquid crystal display device of an active matrix type. Pairs of electrons and holes, caused by the known internal photoelectric effect, are produced by the laser beam's irradiation on electrically conductive thin films, including silicon, layered on the substrate. This process allows for the detection of defects by measuring the increase in current flowing through intersections of the conductive thin films, thus determining the position of the defect based on the scanning position of the laser beam.

Career Highlights

Hiroshi Sano is currently employed at Matsushita Electric Industrial Co., Ltd., where he continues to develop innovative technologies in the field of electronics. His work has significantly impacted the efficiency and reliability of thin film transistors and display technologies.

Collaborations

Throughout his career, Hiroshi has collaborated with notable colleagues, including Yutaka Miyata and Mamoru Furuta. These collaborations have further enhanced his research and development efforts in the field.

Conclusion

Hiroshi Sano's contributions to thin film technology through his patents and work at Matsushita Electric Industrial Co., Ltd. highlight his role as a key innovator in the electronics industry. His inventions not only advance manufacturing techniques but also improve the quality and performance of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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