Hitachi, Japan

Hiroshi Owada


Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 85(Granted Patents)


Company Filing History:


Years Active: 1992-1994

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3 patents (USPTO):Explore Patents

Title: Hiroshi Owada: Innovator in Semiconductor Technology

Introduction

Hiroshi Owada is a prominent inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative semiconductor devices that enhance performance and efficiency.

Latest Patents

Hiroshi Owada's latest patents include a composite semiconductor device with Schottky and pn junctions. This semiconductor device integrates a diode with a Schottky barrier and a MOS transistor within a single semiconductor substrate, allowing for shared main electrodes. Another notable patent is for a semiconductor Schottky barrier device with pn junctions, which features two diodes arranged side by side, optimizing current flow and voltage characteristics.

Career Highlights

Throughout his career, Hiroshi Owada has worked with esteemed companies such as Hitachi, Ltd. and Hitachi Haramachi Semiconductor, Ltd. His experience in these organizations has allowed him to develop cutting-edge technologies that push the boundaries of semiconductor applications.

Collaborations

Hiroshi has collaborated with notable coworkers, including Mutsuhiro Mori and Yasumiti Yasuda. Their combined expertise has contributed to the advancement of semiconductor innovations.

Conclusion

Hiroshi Owada's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.

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