The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 1994
Filed:
Nov. 05, 1992
Applicant:
Inventors:
Mutsuhiro Mori, Hitachi, JP;
Yasumiti Yasuda, Hitachi, JP;
Naoki Sakurai, Hitachi, JP;
Hidetoshi Arakawa, Kitaibaraki, JP;
Hiroshi Owada, Hitachi, JP;
Assignees:
Hitachi, Ltd., Tokyo, JP;
Hitachi Haramachi Semiconductor, Ltd., Hitachi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257475 ; 257476 ; 257483 ; 257484 ; 257916 ;
Abstract
A semiconductor device includes a diode having a Schottky barrier and a MOS transistor integrally formed in one and the same semiconductor substrate in which the diode and MOS transistor have their main electrode in common use. The diode has a first diode portion having a pn junction in a current-passing direction and a second diode portion having a combination of the Schottky barrier and another pn junction in the current passing direction.