The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1992
Filed:
Feb. 26, 1991
Mutsuhiro Mori, Hitachi, JP;
Yasumiti Yasuda, Hitachi, JP;
Naoki Sakurai, Hitachi, JP;
Hidetoshi Arakawa, Kitaibaraki, JP;
Hiroshi Owada, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi Haramachi Semiconductor Ltd., Hitachi, JP;
Abstract
A semiconductor device has a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J.sub.F is passed into the second diodes, the relation ##EQU1## is established in a forward voltage V.sub.F range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant, T represents the absolute temperature, and q represents the quantity of electron charges. The first diode is constituted by a first semiconductor region of one conductive type and a second semiconductor region of the other conductive type provided so as to be adjacent to the first semiconductor region to form a pn junction, so as to be in ohmic contact with one main electrode, and so as to have an impurity concentration higher than that of the first semiconductor region, and the second diode is constituted by the first semiconductor region of the one conductive type and a third semiconductor region of the other conductive type provided so as to be adjacent to the first semiconductor region to form a pn junction, so as to be in contact through a Schottky barrier with the one main electrode, and so as to have an impurity concentration higher than the first semiconductor region.