Shibata, Japan

Hiroshi Onodera


Average Co-Inventor Count = 5.5

ph-index = 5

Forward Citations = 356(Granted Patents)


Location History:

  • Miyagi, JP (2002 - 2003)
  • Shibata, JP (2003 - 2005)

Company Filing History:


Years Active: 2002-2005

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5 patents (USPTO):Explore Patents

Title: Hiroshi Onodera: Innovator in Semiconductor Technology

Introduction

Hiroshi Onodera is a prominent inventor based in Shibata, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on improving the reliability and efficiency of semiconductor devices.

Latest Patents

One of Hiroshi Onodera's latest patents is for a semiconductor device and manufacturing method. This stacked-type semiconductor device features a reduced overall height and enhanced mechanical strength. It also boasts improved heat release characteristics. The design includes a first interposer with first electrode pads and a mounted first semiconductor element. A second interposer is equipped with second electrode pads and a mounted second semiconductor element. External connection terminals are strategically placed on the second interposer, ensuring effective electrical connections between the interposers through conductive members. The back surfaces of both semiconductor elements are securely bonded using adhesive.

Career Highlights

Hiroshi Onodera is currently employed at Fujitsu Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more reliable and efficient.

Collaborations

Hiroshi has collaborated with notable coworkers, including Akira Takashima and Tadashi Uno. Their combined expertise has contributed to the success of various projects within the semiconductor field.

Conclusion

Hiroshi Onodera's contributions to semiconductor technology exemplify his dedication to innovation and improvement in the industry. His patents reflect a commitment to enhancing the performance and reliability of semiconductor devices.

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