Toyama, Japan

Hiroshi Nakagawa

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Panasonic Corporation. Active years: 2013-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Nakagawa. Retrieved from https://idiyas.com/inventor/hiroshi-nakagawa-pl6ldcip

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2013-2014

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2 patents (USPTO):Explore Patents

Title: The Innovations of Inventor Hiroshi Nakagawa

Introduction

Hiroshi Nakagawa is a notable inventor based in Toyama, Japan, recognized for his contributions to the field of semiconductor technology. Having secured two patents, Nakagawa has made significant strides in the development of advanced semiconductor devices that are essential for modern electronic applications.

Latest Patents

One of Nakagawa's latest patents is titled "Semiconductor device including high-k/metal gate electrode." This invention describes a semiconductor device featuring a high dielectric gate insulating film situated on a substrate, with a metal gate electrode placed atop this film. Notably, the metal gate electrode consists of both a crystalline and an amorphous portion, with a halogen element positioned eccentrically within the amorphous area, enhancing the device's functionality.

His second patent focuses on another "Semiconductor device." This innovation includes a semiconductor substrate paired with an n-channel MOS transistor. The transistor comprises a first gate insulating film over a p-type layer, a first gate electrode constructed from TiN, and an upper gate electrode made from semiconductor doped with impurities. Furthermore, it features a p-channel MOS transistor which includes a second gate insulating film over an n-type layer, a second gate electrode incorporating a TiN layer with a specific crystal orientation ratio, and another upper gate electrode constructed of doped semiconductor material.

Career Highlights

Hiroshi Nakagawa is employed at Panasonic Corporation, a renowned global electronics and technology company. His work at Panasonic underscores his commitment to advancing semiconductor technology and fostering innovation within the industry.

Collaborations

Throughout his career, Nakagawa has collaborated with talented professionals such as Jun Suzuki. Their partnership exemplifies the spirit of teamwork that often drives innovation in technology fields.

Conclusion

In summary, Hiroshi Nakagawa's contributions to semiconductor technology through his innovative patents highlight his expertise and influence in the field. As a key inventor at Panasonic Corporation, Nakagawa continues to push the boundaries of what is possible in semiconductor devices, paving the way for future advancements in electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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