The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Jan. 12, 2011
Jun Suzuki, Toyama, JP;
Hiroshi Nakagawa, Toyama, JP;
Jun Suzuki, Toyama, JP;
Hiroshi Nakagawa, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a semiconductor substrate; an n-channel MOS transistor including a first gate insulating film provided on a p-type layer, a first gate electrode made of TiN, and a first upper gate electrode made of semiconductor doped with impurities; and a p-channel MOS transistor including a second gate insulating film provided on an n-type layer, a second gate electrode including at least as a part, a TiN layer made of TiN crystal in which a ratio of (111) orientation/(200) orientation is about 1.5 or more, and a second upper gate electrode made of semiconductor doped with impurities.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile