Hitachiota, Japan

Hiroshi Hozouji

This inventor holds 1 USPTO granted patent. Top assignee: Renesas Electronics Corporation. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Hozouji. Retrieved from https://idiyas.com/inventor/hiroshi-hozouji

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Hiroshi Hozouji: Innovator in Semiconductor Technology

Introduction

Hiroshi Hozouji is a notable inventor based in Hitachiota, Japan. He has made significant contributions to the field of semiconductor technology, particularly in improving the manufacturing processes of semiconductor devices. His innovative approach addresses critical challenges in adhesion between leadframes and plating films.

Latest Patents

Hozouji holds a patent for a semiconductor device and method of manufacturing the same. This invention tackles the limitations of conventional surface roughening plating technology, which often fails to enhance adhesion between metal members, such as leadframes, and sealing resins. His method involves using a metal member that has undergone alloying treatment and is Zn plated on the surface, thereby improving the overall manufacturing process.

Career Highlights

Hiroshi Hozouji is currently employed at Renesas Electronics Corporation, where he continues to develop innovative solutions in semiconductor technology. His work has been instrumental in advancing the efficiency and reliability of semiconductor devices.

Collaborations

Hozouji collaborates with talented colleagues, including Takuya Nakajo and Masaki Tamura, who contribute to the innovative environment at Renesas Electronics Corporation.

Conclusion

Hiroshi Hozouji's contributions to semiconductor technology exemplify the importance of innovation in enhancing manufacturing processes. His patent reflects a commitment to overcoming industry challenges and improving product performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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