US

Hiroshi Amano

This inventor holds 2 USPTO granted patents. Top assignees: Pioneer Electronic Corporation, Toyoda Gosei Co., Ltd., Other. Active years: 1994-1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Amano. Retrieved from https://idiyas.com/inventor/hiroshi-amano-s0e5v598

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 165(Granted Patents)


Company Filing History:


Years Active: 1994-1995

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2 patents (USPTO):Explore Patents

Title: Hiroshi Amano: Innovator in Gallium Nitride Semiconductor Technology

Introduction

Hiroshi Amano is a prominent inventor known for his significant contributions to the field of semiconductor technology. He has been instrumental in the development of gallium nitride (GaN) based devices, which have numerous applications in electronics and optoelectronics. With a total of 2 patents, Amano's work has paved the way for advancements in high-performance semiconductor devices.

Latest Patents

Amano's latest patents include a method of fabricating a gallium nitride based semiconductor device. This invention discloses a gallium nitride type semiconductor device that features a single crystal of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N. This device effectively suppresses the occurrence of crystal defects, resulting in high crystallization and excellent flatness. The fabrication method involves using a silicon substrate and an intermediate layer containing aluminum and nitrogen, which is formed on the substrate. The process is conducted at temperatures ranging from 400°C to 1300°C, allowing for the formation of a thin intermediate layer and multiple layers of single crystal (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N.

Another notable patent is for a compound semiconductor vapor phase epitaxial device. This device comprises a cylindrical reactor vessel with multiple flow channels, a crystal substrate, and gas supply pipes that deliver the necessary elements for growth. The design includes slits or fine holes that facilitate the formation of a laminate layer flow of gases, enhancing the growth process on the crystal substrate.

Career Highlights

Throughout his career, Hiroshi Amano has worked with various companies, including Pioneer Electronic Corporation. His innovative work in semiconductor technology has earned him recognition and respect in the scientific community.

Collaborations

Amano has collaborated with notable figures in the field, including Isamu Akasaki and Atsushi Watanabe. Their joint efforts have contributed to significant advancements in semiconductor research and development.

Conclusion

Hiroshi Amano's contributions to gallium nitride semiconductor technology have had a lasting impact on the industry. His innovative patents and collaborations with other experts highlight his role as a leading inventor in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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