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Pioneer Electronic Corporation

Toyoda Gosei Co., Ltd.

Hiroshi Amano

Isamu Akasaki

Atsushi Watanabe

Tetsuya Takeuchi

Katsuhide Manabe

Kazumasa Hiramatsu

Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N (0.ltoreq.x.gtoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400.degree. to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.1-x Al.sub.x).sub. 1-y In.sub.y N are formed on the intermediate layer.

Method of fabricating a gallium nitride based semiconductor device with

A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel, a plurality of flow channels disposed in the reactor vessel, a crystal substrate disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit or linearly arranged fine holes communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.

Compound semiconductor vapor phase epitaxial device

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Hiroshi Amano