Hiroo Hongo

Title: Hiroo Hongo and an Alignment Mark for Electron Beam Lithography.

Introduction

Hiroo Hongo is an inventor associated with Stuttgart, Germany. His listed patent concerns an alignment mark designed to support precise electron beam lithography during the fabrication of fine semiconductor structures.

Latest Patents

Hongo is credited with 1 patent: “Alignment Mark for Electron Beam Lithography.” The invention describes a mark for processes that repeatedly regrow compound semiconductor layers and use electron beam exposure to create fine patterns. Its structure includes a tungsten lower protection layer on a compound semiconductor substrate, a patterned mark body made of gold, chromium, or platinum, and a silicon oxide upper protection layer. The mark body has a sharp edge profile intended to produce a strong signal for detecting its position, and its thickness is at least 100 nanometers. The silicon oxide layer is selected to avoid significant reaction with materials in the compound semiconductor layer.

Career Highlights

The provided information associates Hongo with Tokyo Institute of Technology. His patent addresses alignment and mark detection in semiconductor manufacturing, where accurate positioning can support repeated lithography and regrowth steps.

Collaborations

Hongo’s listed coworker is Yasuyuki Miyamoto. The available information does not specify their roles or the details of their collaboration.

Conclusion

Hiroo Hongo’s patent presents a layered alignment mark intended to improve position detection in electron beam lithography for compound semiconductor fabrication.