Hyogo, Japan

Hironori Matsuyoshi


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Hironori Matsuyoshi: Innovator in Metal Insulator Metal Capacitors

Introduction

Hironori Matsuyoshi is a notable inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of metal insulator metal (MIM) trench capacitors. His innovative methods have the potential to enhance the performance and efficiency of electronic devices.

Latest Patents

Matsuyoshi holds a patent for a "Method for manufacturing a trench metal insulator metal capacitor." This patent outlines a detailed process that includes forming a cavity in an Intermetal Dielectric stack, depositing metal layers, and utilizing a sacrificial layer for effective manufacturing. The method emphasizes precision in creating capacitors that are essential for modern electronic applications.

Career Highlights

Hironori Matsuyoshi is currently associated with Tower Semiconductor Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced manufacturing techniques that are crucial for the production of high-performance electronic components.

Collaborations

Matsuyoshi has collaborated with esteemed colleagues such as Michael Lisiansky and Amos Fenigstein. These partnerships have fostered an environment of innovation and have contributed to the advancement of semiconductor technologies.

Conclusion

Hironori Matsuyoshi's contributions to the field of semiconductor manufacturing, particularly through his patented methods, highlight his role as a key innovator. His work continues to influence the development of efficient electronic components, showcasing the importance of innovation in technology.

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