Hironori Matsunaga is a prominent inventor based in Noda, Japan. He has made significant contributions to the field of ferroelectric materials, holding a total of 13 patents. His work focuses on the development of advanced thin film technologies that have applications in various electronic devices.

Latest Patents

Matsunaga's latest patents include a ferroelectric thin film coated substrate and a capacitor structure element utilizing this technology. The producing method involves forming a metal oxide buffer layer on a substrate, followed by the deposition of a first crystalline ferroelectric thin film using a Metal-Organic Chemical Vapor Deposition (MOCVD) method. A second ferroelectric thin film, thicker than the first, is then formed at a lower temperature, resulting in a dense and even surface with excellent leakage current properties and significant remanent spontaneous polarization. Another notable patent involves the creation of a bismuth silicate film on a silicon substrate, which supports a c-axis-oriented ferroelectric thin film, leading to the development of a highly reliable thin film device.

Career Highlights

Matsunaga is associated with Sharp Corporation, a leading company in the electronics industry. His innovative work has positioned him as a key figure in the advancement of ferroelectric materials, contributing to the development of next-generation electronic devices.

Collaborations

Matsunaga has collaborated with notable colleagues, including Takeshi Kijima and Masayoshi Koba. Their combined expertise has furthered research and development in the field of ferroelectric thin films.

Conclusion

Hironori Matsunaga's contributions to ferroelectric thin film technology have made a significant impact on the electronics industry. His innovative patents and collaborations continue to drive advancements in this important field.

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