The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Jun. 16, 2000
Applicant:
Inventors:
Takeshi Kijima, Omiya, JP;
Hironori Matsunaga, Fujisawa, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ; H01L 2/7108 ;
U.S. Cl.
CPC ...
H01L 2/176 ; H01L 2/7108 ;
Abstract
A bismuth silicate film (insulating film),of Bi,SiO,oriented predominantly in the direction of (,) is formed on a Si substrate,and a ferroelectric thin film,is formed on the bismuth silicate film,to create an MFIS structure having a c-axis-oriented ferroelectric thin film,formed with good reproducibility. A highly reliable thin film device is produced by applying the MFIS structure to a FET.