The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1996
Filed:
Dec. 28, 1994
Applicant:
Inventors:
Sakiko Satoh, Chiba-ken, JP;
Hironori Matsunaga, Chiba-ken, JP;
Kenji Nakanishi, Chiba-ken, JP;
Yoshiyuki Masuda, Chiba-ken, JP;
Masayoshi Koba, Nara-ken, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257295 ; 257310 ; 257325 ;
Abstract
The present invention provides a substrate providing a ferroelectric crystal thin film which includes an electrode formed on a semiconductor single crystal substrate and a ferroelectric crystal thin film of Bi.sub.4 Ti.sub.3 O.sub.12 formed on the electrode through the intermediary of a buffer layer.
Quick Actions:
Satoh, Sakiko. (1996). Ferroelectric thin film with intermediate buffer layer (U.S. Patent No. 5576564). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5576564
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile