This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Fuji Electric Co., Ltd.. Active years: 2016.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2016
Title: Hiromi Koyama: Innovator in Semiconductor Technology
Introduction
Hiromi Koyama is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique semiconductor device that enhances performance while managing costs effectively.
Latest Patents
Hiromi Koyama holds a patent for a semiconductor device having a diffusion region. This device is designed to achieve a high reverse recovery resistant amount by optimizing the sheet resistance of a peripheral portion in a p-type diffusion region. The innovation allows for a reduction in costs while maintaining high performance.
Career Highlights
Koyama is associated with Fuji Electric Co., Ltd., where she has been instrumental in advancing semiconductor technologies. Her work focuses on improving the efficiency and reliability of semiconductor devices, which are crucial in various electronic applications.
Collaborations
Throughout her career, Hiromi Koyama has collaborated with notable colleagues, including Takashi Shiigi and Akihiro Fukuchi. These collaborations have further enriched her research and development efforts in the semiconductor field.
Conclusion
Hiromi Koyama's contributions to semiconductor technology exemplify her innovative spirit and dedication to advancing the industry. Her patent and collaborative efforts highlight her role as a key player in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
