The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
May. 16, 2013
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Hiromi Koyama, Tokyo, JP;
Takashi Shiigi, Matsumoto, JP;
Akihiro Fukuchi, Matsumoto, JP;
Seiji Momota, Matsumoto, JP;
Toshiyuki Matsui, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
A semiconductor device is disclosed. The semiconductor device is capable of obtaining a high reverse recovery resistant amount by allowing sheet resistance of a peripheral portion in a p type diffusion region that is in contact with a metal electrode through an insulating film on a surface to be as high as possible and reducing an increase in cost if possible. The semiconductor device includes: a p type diffusion region that is disposed in a surface layer of the one main surface of an n type semiconductor substrate; and a voltage-resistant region that surrounds the p type diffusion region.