Aichi, Japan

Hiroki Ono

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Aichi, JP (2022)
  • Aichi-ken, JP (2023)

Company Filing History:


Years Active: 2022-2023

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4 patents (USPTO):Explore Patents

Title: Hiroki Ono: Innovator in Shift Device Technology

Introduction

Hiroki Ono is a notable inventor based in Aichi, Japan, recognized for his contributions to shift device technology. With a total of four patents to his name, Ono has made significant advancements in the functionality and accuracy of shift devices.

Latest Patents

One of his latest patents is a shift device with a shift body that can be inhibited from displacement. In this innovative design, the shift position of a knob is altered as a result of the knob being displaced vertically and rotated in either direction. The knob is strategically placed on the outer side of a supporting column, which prevents unnecessary downward displacement. Another significant patent is a shift device that improves detection accuracy. In this device, the shift position of a knob is altered through rotation, while a Hall IC on a wiring substrate detects the rotation position of a magnet within the knob. The placement of the Hall IC on the outer side of the magnet's radial direction enhances the relative position change, thereby improving detection accuracy.

Career Highlights

Hiroki Ono has worked with prominent companies such as Tokai Rika Co., Ltd. and Toyota Motor Corporation. His experience in these organizations has contributed to his expertise in developing innovative shift devices.

Collaborations

Ono has collaborated with talented individuals in his field, including Takahiro Hirashita and Masaaki Shiozaki. Their teamwork has likely fostered an environment of creativity and innovation.

Conclusion

Hiroki Ono's work in shift device technology showcases his inventive spirit and dedication to improving user experience. His patents reflect a commitment to enhancing functionality and accuracy in this field.

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